parameter symbol value unit drain-source voltage v d s s 200 v drain current - continuous i d 18 a drain current - pulsed i d m 72 a gate-source voltage v g s s 30 v power dissipation p d 125 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c IRFS640B description parameter symbol test conditions min. typ. max. unit drain-source breakdown voltage bv d s s v g s = 0v, i d =250 a 200 v zero gate voltage drain current i d s s v d s =200v, v g s =0v 10 ua gate-body leakage current, forward i g s s f v g s =30v, v d s =0v 100 ua gate-body leakage current, reverse i g s s r v g s = -30v, v d s =0v -100 ua gate threshold voltage v g s ( t h ) v d s = v g s , i d =250 a 2.0 4.0 v static drain-source on-resistance r d s ( o n ) v g s = 10 v, i d = 10.0 a 0.14 0.18 w drain-source diode forward voltage v s d v g s = 0 v, i s = 18.0 a 2.0 v 200v n-channel mosfet product specification these n-channel enhancement mode power field effect transistors are produced using fairchilds proprietary,planar, dmos technology. this advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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